FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4294653700> ?p ?o ?g. }

• W4294653700 endingPage "108448" @default.
• W4294653700 startingPage "108448" @default.
• W4294653700 abstract "A detailed electrical characterization and transistor parameter extraction on 200 mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main transistor parameters (threshold voltage Vth, low-field mobility μ0, subthreshold swing SS, source-drain series resistance Rsd) were extracted in linear region using the Y-function and the Lambert-W function methods for gate lengths down to 0.1 µm. The Y-function method was also employed in saturation region for the extraction of the saturation velocity. The results indicate that these GaN/Si HEMT devices demonstrate a very good functionality down to very low temperature with improvement of mobility and subthreshold slope. It was also shown by TLM analysis that the source-drain series resistance Rsd is more limited by the contact resistance than by the 2DEG access region resistance as temperature is lowered." @default.
• W4294653700 created "2022-09-05" @default.
• W4294653700 creator A5003718675 @default.
• W4294653700 creator A5006322242 @default.
• W4294653700 creator A5029342519 @default.
• W4294653700 creator A5030904581 @default.
• W4294653700 creator A5035576787 @default.
• W4294653700 creator A5050674003 @default.
• W4294653700 creator A5052670200 @default.
• W4294653700 creator A5060874168 @default.
• W4294653700 creator A5085660248 @default.
• W4294653700 date "2022-11-01" @default.
• W4294653700 modified "2023-10-18" @default.
• W4294653700 title "Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures" @default.
• W4294653700 cites W1525758079 @default.
• W4294653700 cites W1555058770 @default.
• W4294653700 cites W1946655857 @default.
• W4294653700 cites W1981118854 @default.
• W4294653700 cites W2020330572 @default.
• W4294653700 cites W2059219854 @default.
• W4294653700 cites W2062642047 @default.
• W4294653700 cites W2076862654 @default.
• W4294653700 cites W2097404221 @default.
• W4294653700 cites W2106907859 @default.
• W4294653700 cites W2147447503 @default.
• W4294653700 cites W2150296784 @default.
• W4294653700 cites W2470601434 @default.
• W4294653700 cites W2612837585 @default.
• W4294653700 cites W2804924600 @default.
• W4294653700 cites W2905443228 @default.
• W4294653700 cites W2919623928 @default.
• W4294653700 cites W2977873091 @default.
• W4294653700 cites W2982414661 @default.
• W4294653700 cites W3019951362 @default.
• W4294653700 cites W3116079752 @default.
• W4294653700 cites W3166878629 @default.
• W4294653700 cites W3199520251 @default.
• W4294653700 cites W4294891505 @default.
• W4294653700 cites W565794827 @default.
• W4294653700 doi "https://doi.org/10.1016/j.sse.2022.108448" @default.
• W4294653700 hasPublicationYear "2022" @default.
• W4294653700 type Work @default.
• W4294653700 citedByCount "1" @default.
• W4294653700 countsByYear W42946537002023 @default.
• W4294653700 crossrefType "journal-article" @default.
• W4294653700 hasAuthorship W4294653700A5003718675 @default.
• W4294653700 hasAuthorship W4294653700A5006322242 @default.
• W4294653700 hasAuthorship W4294653700A5029342519 @default.
• W4294653700 hasAuthorship W4294653700A5030904581 @default.
• W4294653700 hasAuthorship W4294653700A5035576787 @default.
• W4294653700 hasAuthorship W4294653700A5050674003 @default.
• W4294653700 hasAuthorship W4294653700A5052670200 @default.
• W4294653700 hasAuthorship W4294653700A5060874168 @default.
• W4294653700 hasAuthorship W4294653700A5085660248 @default.
• W4294653700 hasBestOaLocation W42946537002 @default.
• W4294653700 hasConcept C114614502 @default.
• W4294653700 hasConcept C119599485 @default.
• W4294653700 hasConcept C127413603 @default.
• W4294653700 hasConcept C14485415 @default.
• W4294653700 hasConcept C156465305 @default.
• W4294653700 hasConcept C162057924 @default.
• W4294653700 hasConcept C165801399 @default.
• W4294653700 hasConcept C172385210 @default.
• W4294653700 hasConcept C192562407 @default.
• W4294653700 hasConcept C195370968 @default.
• W4294653700 hasConcept C33923547 @default.
• W4294653700 hasConcept C46362747 @default.
• W4294653700 hasConcept C49040817 @default.
• W4294653700 hasConcept C9930424 @default.
• W4294653700 hasConceptScore W4294653700C114614502 @default.
• W4294653700 hasConceptScore W4294653700C119599485 @default.
• W4294653700 hasConceptScore W4294653700C127413603 @default.
• W4294653700 hasConceptScore W4294653700C14485415 @default.
• W4294653700 hasConceptScore W4294653700C156465305 @default.
• W4294653700 hasConceptScore W4294653700C162057924 @default.
• W4294653700 hasConceptScore W4294653700C165801399 @default.
• W4294653700 hasConceptScore W4294653700C172385210 @default.
• W4294653700 hasConceptScore W4294653700C192562407 @default.
• W4294653700 hasConceptScore W4294653700C195370968 @default.
• W4294653700 hasConceptScore W4294653700C33923547 @default.
• W4294653700 hasConceptScore W4294653700C46362747 @default.
• W4294653700 hasConceptScore W4294653700C49040817 @default.
• W4294653700 hasConceptScore W4294653700C9930424 @default.
• W4294653700 hasLocation W42946537001 @default.
• W4294653700 hasLocation W42946537002 @default.
• W4294653700 hasLocation W42946537003 @default.
• W4294653700 hasOpenAccess W4294653700 @default.
• W4294653700 hasPrimaryLocation W42946537001 @default.
• W4294653700 hasRelatedWork W2068545053 @default.
• W4294653700 hasRelatedWork W2166481560 @default.
• W4294653700 hasRelatedWork W2292296501 @default.
• W4294653700 hasRelatedWork W2296303258 @default.
• W4294653700 hasRelatedWork W2793704047 @default.
• W4294653700 hasRelatedWork W2957614372 @default.
• W4294653700 hasRelatedWork W3100668214 @default.
• W4294653700 hasRelatedWork W4220980193 @default.
• W4294653700 hasRelatedWork W4241238243 @default.
• W4294653700 hasRelatedWork W4294653700 @default.

• next