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- W4294838559 abstract "The 2D metal chalcogenide has attracted lots of research interest in the field of catalysis, optoelectronics, energy storage, electron emission, light emission as well as in sensors. These properties arise due to their low bandgap, high surface area, moderate work function and high charge carrier mobility. Therefore, in the present work, we synthesise SnS2 using the micellar-assisted hydrothermal route. The role of surfactant charge on the morphology of SnS2 has been also extensively explored. Microstructure analysis shows the formation of hexagonal sheets of size 250–300 nm; whereas the sheet thickness is strongly dependent on the surfactant charge. The presence of cationic and anionic surfactants leads to the formation of the ultrathin sheet (∼3.3 nm) and ∼ 11 nm respectively; whereas the SnS2 sheet obtained in absence of any surfactant has a thickness of ∼ 76 nm. For the fabrication of SnS2 film, synthesised samples have been dispersed in ethanol and ethylene glycol mixture via ultrasonication and spin-coated over the silicon substrate. The field emission properties of CTAB assisted SnS2 to show the lowest turn-on field 4.4 V/μm and a high current density (∼9.6 μA/cm2). Earlier, the lowest reported turn-on field of SnS2 was 4.8 V/μm at 1 μA/cm2 current density." @default.
- W4294838559 created "2022-09-07" @default.
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- W4294838559 date "2022-12-01" @default.
- W4294838559 modified "2023-09-23" @default.
- W4294838559 title "Understanding the role of sheet thickness on field emission from engineered hexagonal tin disulphide" @default.
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- W4294838559 doi "https://doi.org/10.1016/j.apsusc.2022.154816" @default.
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