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- W4294855461 abstract "This paper presents an efficient, highly responsive and highly repeatable MoS 2 /SiNWs heterostructure based photodetector. SiNWs samples were synthesized using metal assisted chemical etching and MoS 2 nanoflakes were grown on SiNWs using wafer scalable processes. SiNWs, MoS 2 and MoS 2 /SiNWs based devices were tested for photodetection performance in the visible region. The heterostructure interface between MoS 2 and SiNWs helps to suppress dark current and enhance performance characteristics. The MoS 2 /SiNWs exhibits higher responsivity of 2.98 AW -1 at 450 nm illumination, which is 3 and 11 times higher than the SiNWs and MoS 2 respectively. In addition, this heterojunction based device exhibits a higher detectivity of 2.7 × 10 11 Jones and rise/fall time of 0.45/0.75 s. Moreover, the device fabrication method is simple and cost-effective. These results pave the way for the fabrication of scalable, highly repeatable and responsive miniaturized photodetectors based on MoS 2 /SiNWs for mass production. • MoS 2 /SiNWs heterojunction based photodetector was constructed using a scalable fabrication process. • Photoresponsivity and detectivity of MoS 2 /SiNWs photodetector were enhanced in the visible region. • The rise/fall time of the device was estimated to be 0.45/0.75 s. • The MoS 2 /SiNWs heterojunction device shows highly repeatable results." @default.
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- W4294855461 date "2022-11-01" @default.
- W4294855461 modified "2023-09-24" @default.
- W4294855461 title "MoS2/SiNWs heterostructure based repeatable and highly responsive photodetector" @default.
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- W4294855461 doi "https://doi.org/10.1016/j.optmat.2022.112918" @default.
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