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- W4295037083 abstract "The three-dimensional(3D) ceramic substrate consists of a flat ceramic substrate and a dam to form a cavity structure to house the chip. Then a cover can be sealed to achieve a hermetic package. With the development of photoelectric devices such as deep ultraviolet LED and LD laser, 3d ceramic substrate has become a hot research object. However, the residual stress of 3D ceramic substrate with large-area and thick metalized layer is usually enormous. Significant residual stresses will cause reliability challenges such as crack and delamination in the service period. Previous studies show that sintering temperature is the decisive factor of the residual stress of ceramic substrate. DPC ceramic substrate, prepared under low temperature, has good mechanical reliability and is an excellent packaging material for high-power and high-temperature devices. However, there are few reports on the residual stress of DPC substrate. This study established 3D ceramic substrate models by finite element method. We compare the residual stresses of four typical substrates (HTCC: 1350, LTCC: 850, DBC: 300, DPC:40) at different preparation temperatures. The analysis results show that the maximum residual stress of all four kinds of ceramic substrates occurs at the outer boundary of the metalized layer. And the residual stress of DPC substrate is much smaller than that of the other three ceramic substrates, which indicates that reducing the preparation temperature is an effective means to control the residual stress of ceramic substrate. The above analysis results indicate that the 3D-DPC substrate process prepared at low temperature must be adopted for ceramic substrate with a thick metalized layer. Otherwise, the enormous residual stress will cause serious reliability problems, leading to the damage and fracture of the ceramic substrate. Finally, two methods and processes for preparing 3D-DPC ceramic substrate at low temperature below 40 were described, including multilayer plated ceramic substrate (MPC) and direct molding ceramic substrate (DMC)." @default.
- W4295037083 created "2022-09-09" @default.
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- W4295037083 date "2022-08-10" @default.
- W4295037083 modified "2023-10-16" @default.
- W4295037083 title "Low Residual Stress Three-dimensional Direct Plated Copper Ceramic Substrate" @default.
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- W4295037083 doi "https://doi.org/10.1109/icept56209.2022.9873182" @default.
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