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- W4295308807 abstract "The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technology well addresses this challenge. Particularly UV-LA can reduce resistivity by enlarging metallic grains in lines or thin films, irradiating only the interconnects for short timescales. However, the risk of failure in electrical performance must be correctly managed, and that of UV-LA has not been deeply studied yet. In this work microsecond-scale UV-LA is applied on a stack comparable to an interconnect structure (dielectric/Cu/Ta/SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /Si) in either melt or sub-melt regime for grain growth. The failure modes such as (i) Cu diffusion into SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> , (ii) O incorporation into Cu, and (iii) intermixing between Cu and Ta are investigated." @default.
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- W4295308807 date "2022-06-27" @default.
- W4295308807 modified "2023-09-30" @default.
- W4295308807 title "Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films" @default.
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- W4295308807 doi "https://doi.org/10.1109/iitc52079.2022.9881308" @default.
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