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• W4295851574 abstract "Abstract We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator deposition on the interfacial properties of Al 2 O 3 /AlGaN/GaN metal–insulator–semiconductor (MIS) structures. MIS-capacitors (MIScaps) with regrown AlGaN layer exhibited anomalously excessive threshold voltage shift compared to reference sample without regrown AlGaN, suggesting highly reduced interface states density ( D it ). Moreover, MIScaps with regrown AlGaN layer exhibited “spill-over” in the capacitance–voltage profiles, further evidencing the improved Al 2 O 3 /AlGaN interfaces. Fabricated three-terminal MIS-HEMTs with regrown AlGaN showed less hysteresis in transfer curves, enhanced maximum drain current, and increased linearity over the reference device." @default.
• W4295851574 created "2022-09-15" @default.
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• W4295851574 date "2022-09-22" @default.
• W4295851574 modified "2023-09-27" @default.
• W4295851574 title "Evidence of reduced interface states in Al₂O₃/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer" @default.
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• W4295851574 doi "https://doi.org/10.35848/1882-0786/ac8f13" @default.
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