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- W4295940282 abstract "Identifying a suitable material for long wavelength infrared (LWIR) detection has generated progressive research interest in the last few years. Ternary materials such as HgCdTe, PbSeTe, and InAsSb, which were widely used for LWIR applications are slowly losing their popularity due to the inherent difficulties in fabrication. III–V–N–Bi quaternary alloys such as InAsNBi can play a pivotal role in detection in the range of 8–12 µm (LWIR range) by addressing the challenges posed by contemporary materials. Due to the tunable band gap properties obtained as a result of the Nitrogen (N) and Bismuth (Bi)-related impurity states incorporated into InAs, InAsNBi can span the wavelength range beyond 10 µm. We have examined the optoelectronic properties of this novel electronic material using a 16-band k.p Hamiltonian. The ratio of N and Bi concentration incorporated into InAs should be ~0.5821 to maintain the condition of lattice matching with the host. The proposed InAs0.92N0.029Bi0.05 material exhibits a band gap reduction of about 219 meV and an enhancement of spin orbit splitting energy by ~14 meV compared with the host InAs. We have also evaluated the band offset of InAsNBi for different compositions of Bi and N. We have achieved a maximum gain of about 2750 cm−1 for a quantum well width of 20 nm, which can be helpful for designing optical devices using this material." @default.
- W4295940282 created "2022-09-16" @default.
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- W4295940282 date "2022-01-01" @default.
- W4295940282 modified "2023-09-26" @default.
- W4295940282 title "Investigation of Optoelectronic Performance of InAsNBi for Infrared Detection" @default.
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- W4295940282 doi "https://doi.org/10.1007/978-981-19-2572-6_36" @default.
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