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- W4295957040 abstract "Along with the expensive fabrication process, ultra-small devices suffer from short channel effects as well; hence, it is suitable to simulate before fabrication but modern simulators lack inclusion of quantum parameters. In this work, charge plasma-based nanoFET on insulator has been analyzed using NEGF. Behavior of the device is briefed using quantum parameters like density of states and transmission probability. The device is analyzed against physical variations, such as variation in electrode work function, variation in gate dielectric and thickness of body insulator. With Hafnium as source electrode and Palladium, Copper as gate and drain electrode respectively, investigated device resulted in I OFF of 1.94 × 10 −13 A/μm and high I ON /I OFF of 7.62 × 10 8 . For the aforementioned optimum parameters, a low DIBL of 0.13 mV/V was observed. Incorporation of quantum effects heightens the precision of the device and hence, the analyzed device can be used for future applications. • Analysis of charge plasma based nanoFET using nonEquilibrium Green's Function. • Effect of variation in work function (source, drain and gate electrode) and thickness of back oxide and high κ on transmission probability of channel in OFF and ON state is presented. • Deviation in density of states available for conduction at source and drain electrode in OFF and ON-State is examined. • Investigation of FET at cryogenic temperatures from 50 K to 400 K. • At optimized condition, device resulted in low I OFF (1.94 × 10 −13 A/μm) and DIBL of 0.13mV/V." @default.
- W4295957040 created "2022-09-16" @default.
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- W4295957040 date "2022-10-01" @default.
- W4295957040 modified "2023-10-16" @default.
- W4295957040 title "Design and performance augmentation of charge-plasma nanoFET with parametric analysis using non-equilibrium Green's function" @default.
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- W4295957040 doi "https://doi.org/10.1016/j.micrna.2022.207399" @default.
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