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- W4296079709 abstract "In this work, results on silicon thin film deposition utilizing a new micro LPCVD technique, based on a MEMS-based microheater device, are presented. This micro LPCVD technique was presented and validated in previous work, where the deposition of <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$mumathrm{c}$</tex> -silicon from SiH <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> , at a pressure of 1 Torr and temperature of 739°C was demonstrated. In this work the study is furthered by Si deposition at different temperatures between 650 °C and 1054 °C and the analysis of the heated region dimensions in each case. The way the material forms along the heated region was also verified and it was observed that in the same process, amorphous, semi-crystalline, and polycrystalline phases are obtained. The temperature and thermal response of the microheaters were estimated by Multiphysics simulation and from real-time measurements of the microheaters' electrical resistance." @default.
- W4296079709 created "2022-09-17" @default.
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- W4296079709 date "2022-08-22" @default.
- W4296079709 modified "2023-09-23" @default.
- W4296079709 title "Characterization of silicon thin films obtained by MicroHeater MEMS based-microLPCVD technique" @default.
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- W4296079709 doi "https://doi.org/10.1109/sbmicro55822.2022.9881036" @default.
- W4296079709 hasPublicationYear "2022" @default.
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