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- W4296098052 abstract "This chapter discusses the saturation of the doping levels in semiconductors will be discussed in terms of the amphoteric defect model. Ability to control the type and magnitude of conductivity is the most important and unique feature that distinguishes semiconductors from all the other solid state materials. Practically all applications of semiconductor materials rely on the availability of reproducible and well controlled doping. In principle, doping can be achieved by introduction of any point or extended defects that can contribute free electrons to the conduction band or free holes to the valence band. Since in most instances diffusion occurs only in the presence of defects this mechanism is closely related to the more general concept of compensation by lattice defects. It has been proposed recently that in semiconductors with the surface Fermi energy pinned in the bandgap, the electrostatic repulsion between charged impurities can lead to limitations on the maximum concentrations of dopants." @default.
- W4296098052 created "2022-09-17" @default.
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- W4296098052 date "2022-09-08" @default.
- W4296098052 modified "2023-09-25" @default.
- W4296098052 title "Saturation of Free Carrier Concentration in Semiconductors" @default.
- W4296098052 doi "https://doi.org/10.1201/9780367811297-2" @default.
- W4296098052 hasPublicationYear "2022" @default.
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