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- W4296100788 abstract "Radiation of semiconductors has been studied for several decades and the two main thrusts of these investigations were, firstly, determining the effects of irradiation on semiconductor properties as a function of projectile type, energy and dose and, secondly, establishing the properties and structure of the defects introduced during irradiation. Whilst solving this problem, it was realized that the defects introduced during ion implantation could be valuable for device isolation applications, and subsequently there was a shift in emphasis towards optimizing ion implantation induced isolation procedures. The realization that radiation induced defects can beneficiate electronic materials and devices by altering their properties, lead to new fields of research and novel applications. An additional mechanism of creating defects, which has not received much attention, occurs when positively charged ions entering a solid have enough energy to surmount the coulombic energy barrier of the host nuclei." @default.
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- W4296100788 date "2022-09-08" @default.
- W4296100788 modified "2023-10-14" @default.
- W4296100788 title "Electrical Characterization of Defects Introduced in Epitaxially Grown GaAs by Electron-, Proton- and He-Ion Irradiation" @default.
- W4296100788 doi "https://doi.org/10.1201/9780367811297-8" @default.
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