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• W4296225847 endingPage "107112" @default.
• W4296225847 startingPage "107112" @default.
• W4296225847 abstract "Thermal annealing has been widely used in the fabrication of microelectronic devices. However, the sub-bandgap infrared (wavelength λ = 1100–2500 nm) absorption of deep-level impurity hyperdoped Si wafer material usually decreases after thermal annealing treatment. This restricts the application of hyperdoped Si in room-temperature infrared photodetectors and broad-spectrum solar cells. Using a newly developed fabrication method, hyperdoping of Si with S was achieved by the nanosecond laser melting of Si/S composite films. Then, a thermal annealing treatment of S-hyperdoped Si (Si:S) films was carried out in a temperate range of T = 473–1273 K and a time range of t = 60–600 s under nitrogen ambient condition. The results show that at T = 1223 or 1273 K and t = 300 or 600 s, the sub-bandgap infrared and above-bandgap (λ = 200–1100 nm) absorbance were several times higher than those of unannealed Si:S films. Furthermore, the product of sheet electron concentration and electron mobility (NS×μ) indicates that these annealing conditions also showed better electrical properties than those of unannealed Si:S films. Combined with the microstructure analysis, the thermal activation mechanism can be proposed as follows: The thermal annealing treatment increased the crystallinity of Si:S films and the concentration of electrically active S impurities in the films. Then, the active S impurity atoms increased the ability of chemical bonding with Si atoms and forming SiS2. This effect induced by thermal annealing led to a high potential of optoelectronic devices fabricated with such Si:S films." @default.
• W4296225847 created "2022-09-18" @default.
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• W4296225847 date "2022-12-01" @default.
• W4296225847 modified "2023-10-16" @default.
• W4296225847 title "Thermal activation mechanism of sulfur impurities in sulfur-hyperdoped silicon films" @default.
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• W4296225847 doi "https://doi.org/10.1016/j.mssp.2022.107112" @default.
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