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- W4296442475 abstract "We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications." @default.
- W4296442475 created "2022-09-20" @default.
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- W4296442475 date "2022-08-09" @default.
- W4296442475 modified "2023-10-18" @default.
- W4296442475 title "Electrode Engineering in Memristors Development for Non-/Erasable Storage, Random Number Generator, and Synaptic Applications" @default.
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- W4296442475 doi "https://doi.org/10.1109/ies55876.2022.9888713" @default.
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