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- W4296475711 abstract "Hot carrier injection (HCI) is a detrimental phenomenon and affects device reliability in circuit. In this paper, electro-thermal effects in nanoscale field effect transistor are simulated numerically, and the transient temperature response of the device is obtained. Furthermore, based on the transient temperature response to different stress voltages, HCI-induced threshold voltage shift (TVS) is captured numerically, and it agrees well with others’ measured results. An artificial neural network (ANN) is then developed as an empirical model to reduce simulation cost. The model is trained by numerical simulation data. It has a good performance in predicting TVS, and greatly reduces the time required for numerical simulation." @default.
- W4296475711 created "2022-09-21" @default.
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- W4296475711 date "2022-09-01" @default.
- W4296475711 modified "2023-09-27" @default.
- W4296475711 title "A Neural Network Model for Electro-thermal Effect Affected Hot Carrier Injection Reliability in N-Type Nanoscale MOSFETs" @default.
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- W4296475711 doi "https://doi.org/10.1109/apemc53576.2022.9888421" @default.
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