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• W4297201437 abstract "• In doped ZnSe films are grown by thermal co-evaporation technique. • Addition of dopant has reduced the band gap and enhanced the electrical conductivity. • In:ZnSe with 15 at.% of Indium has shown promising photo-detection properties. Polycrystalline In:ZnSe films were prepared by the thermal co-evaporation method, where high purity ZnSe and In 2 Se 3 powders are taken as source materials. Orderly change in the X-ray diffraction peak position and red shift in the optical absorption edge have confirmed the incorporation of the dopant in the system. Photoluminescence spectra showed that the doped system has a Zn vacancy, which is in line with energy dispersive spectroscopy measurements. The chemical state of the doped films i.e., Zn 2+ , In 3+ and Se 2− was analysed by Raman and X-ray photoelectron spectroscopy (XPS); XPS has also indicated the incorporation of oxygen in small fractions which improves the conductivity of the films. The electrical investigation has revealed that electrical properties altered by doping and majority charge carriers are electrons and carrier density is in the order of 10 15 cm −3 . Films with 15 at. % In exhibited good photoresponse in the visible range and suitable for photodetector applications." @default.
• W4297201437 created "2022-09-27" @default.
• W4297201437 creator A5016967348 @default.
• W4297201437 creator A5075940807 @default.
• W4297201437 date "2022-10-01" @default.
• W4297201437 modified "2023-09-29" @default.
• W4297201437 title "Effect of indium doping on the optoelectronic properties of ZnSe films" @default.
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• W4297201437 doi "https://doi.org/10.1016/j.tsf.2022.139492" @default.
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