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- W4297399435 abstract "Applying a transverse electric field, we theoretically explore the control of electron-spin filter based on layered semiconductor nanostructure-InSb/In x Ga 1-x As. Because of the electric field dependent effective potential of electron, not only size of spin polarization ratio but also its sign can be manipulated by changing magnitude or direction of applied electric field. An electrically-tunable electron-spin filter can be achieved for spintronics device applications. • Spin polarized transport is studied for electrons through InSb/In x Ga 1-x As/GaSb under a transverse electric field. • Electron-spin polarization is sensitive to applied electric field. • Both magnitude and sign of the spin polarization can be controlled by changing strength or direction of transverse electric field. • This layered semiconductor nanostructure can serve as an electrically-controllable electron-spin filter for spintronics device applications." @default.
- W4297399435 created "2022-09-28" @default.
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- W4297399435 date "2022-12-01" @default.
- W4297399435 modified "2023-09-24" @default.
- W4297399435 title "Cotrolling electron-spin filter via electric field in layered semiconductor nanostructure" @default.
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- W4297399435 doi "https://doi.org/10.1016/j.vacuum.2022.111541" @default.
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