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• W4297788011 abstract "Wide bandwidth and low-power on-chip interconnects are increasingly in demand for high-speed data communication in future exascale computer servers. While CMOS technologies continue to scale in size and improve their performance in terms of operating frequency and speed, the overall system performance is limited by other figures of merit, such as the interconnect between circuits, power consumption, and signal integrity.Recently, optical, radio-frequency (RF), and baseband (BB) I/O transceivers are reported. The optical interconnects have shown good energy efficiency with reconfigurable capability, but it is difficult to be fully integrated in CMOS technology. Particularly, it requires extra cost on packaging. Baseband transceivers can be fully integrated on chip. Unfortunately, as data rates increase, the RC (or LC) time delay, IR voltage drop, and $CV^{2}f$ power loss, as well as channel crosstalk become dominating. In contrast to BB signaling, the RF interconnect transmits electromagnetic (EM)-wave signal in the channel. The binary data of “0” and “1” can be distinguished via OOK modulation. Yet, the data throughput is limited by the narrowband at RF and thus making the data rate to be limited at ∼10 Gb/s. Such a shortcoming has been recently tackled by utilizing carriers at much higher frequencies. Called terahertz (THz)-interconnect, the data rate has been boosted beyond 20 Gb/s, but this approach suffers from significant channel crosstalk as well as small ON/OFF ratio of modulator. Unfortunately, the degradation on the bit-error rate due to the above two factors have not been fully addressed by the prior arts.This talk reports three metadevices for addressing the above challenges for THz-interconnects. The surface plasmonic polariton (SPP), which is commonly recognized with negative permittivity behavior, has demonstrated orders of crosstalk attenuation because its electrical field (E-field) exponentially decays perpendicularly to the metal interface. By gradually corrugating periodical subwavelength metal strips onto the traditional transmission line, SPPs are excited on chip with impedance and mode matching with traditional TEM devices. With this concept, more than 20 dB channel crosstalk suppression has been realized at W-band when the plasmonic channel spacing is $2.4 mu mathrm{m}$. In addition, a split-ring resonator (SRR)-based modulator is introduced. Owing to its high quality-factor, the SRR's resonance is strong inside the ring slit, leading to possibility that attains a high ON/OFF ratio by manipulating the resonance state of the SRR. Incorporating four CMOS switches into the SRR, the SRR can transit its characteristic between passband and stopband, and thus enables amplitude modulation without consuming static power. The SRR-based modulator achieves a recorded 40 dB ON/OFF ratio, occupying only 0.002 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> area. Third, a four-way power-combined coupled-oscillator-network (CON) is introduced. It takes advantages of both SRR and plasmonic transmission line for high-Q resonance, as well as synchronizing each oscillator unit-cell in a close loop. The CON delivers maximum 5.6 dBm at W-band. Finally, a dual-channel plasmonic I/O transceiver is reported. Utilizing the above three metadevices, the proposed fully-integrated 140-GHz I/O can communicate 13.5 Gb/s/lane OOK data stream with $le 10^{-12}$ BER and 2.6-pJ/bit/lane energy efficiency, demonstrating crosstalk-immune feature for THz-interconnect. In contrast, the recovered eye of traditional I/O transceiver are fully distorted due to the channel crosstalk. This work paves a new way toward highly-efficient I/O interconnect for future big-data exascale parallel computing." @default.
• W4297788011 created "2022-10-01" @default.
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• W4297788011 date "2022-08-29" @default.
• W4297788011 modified "2023-09-30" @default.
• W4297788011 title "140 GHz Silicon I/O Interconnect Exploiting Metadevices for Short-Range OOK Communications" @default.
• W4297788011 doi "https://doi.org/10.1109/rfit54256.2022.9882495" @default.
• W4297788011 hasPublicationYear "2022" @default.
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