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- W4297808580 abstract "Wafer-level copper electroplating is an indispensable process in advanced packaging for manufacturing redistribution layers (RDL), micro-bumps, through silicon vias (TSV), etc., where coplanarity is a significant indicator to evaluates whether the plating thickness is uniform among different sized patterns and at different positions. Achieved through precise control of the electric field distribution, a good coplanarity can lower the reliability risks, for example, interfacial voiding or interlayer mismatch, to improve the product yield. However, with developments of greater wafer size and finer interconnect structure, higher demands are set on the material properties. Nanotwinned copper (nt-Cu) is of high-density and highly (111)-oriented coherent twin boundaries and exhibiting enhanced mechanical and electrical performances. In the present study, nt-Cu based electroplating for 8-inch RDL patterned wafer in wafer level packaging (WLP) is conducted with a proprietary plating bath on a horizontal electroplating system. Equipment setting/parameter effects such as shielding plates, circulating flow rate, and wafer spin rate are analyzed on coplanarity performance of nt-Cu. The results indicate nt-Cu microstructure can be formed throughout the wafer and the coplanarity indexed by within-die (WID) nonuniformity is manipulated below the technical threshold < 8%, which is repeatable in an 8 out of 30 random checks. This engineering research offers a pioneer practice for industrial application of nt-Cu electroplating technique." @default.
- W4297808580 created "2022-10-01" @default.
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- W4297808580 date "2022-08-10" @default.
- W4297808580 modified "2023-09-27" @default.
- W4297808580 title "8-inch wafer-level electroplating of nanotwinned copper redistribution layer for advanced packaging" @default.
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- W4297808580 doi "https://doi.org/10.1109/icept56209.2022.9873180" @default.
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