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- W4297808822 abstract "For high-power applications, semiconductor dies were often parallel-connected to deliver more current. The main problem associated with SiC power modules with multiple dies in parallel was the static and dynamic current imbalance, which would lead to the difference in die junction temperature resulting in lower system efficiency and risks in packaging reliability. However, due to the positive temperature effect of the on-resistance (RDS(on)) of the SiC MOSFET, the current imbalance phenomenon could be mitigated to a certain extent. In this study, an electro-thermal methodology was established for the current sharing analysis of a power module packaging design with multiple SiC MOSFETs in parallel. Electro-thermal co-simulation was conducted to reveal the effect of temperature-dependent RDS(on) on the static self-balancing performance. In addition, the effect of different thermal resistances of individual dies was also evaluated. It was found that considering both the PTC of RDS(on) and the difference in thermal resistance for each die was beneficial for static current balancing and temperature equalization in the power module." @default.
- W4297808822 created "2022-10-01" @default.
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- W4297808822 date "2022-08-10" @default.
- W4297808822 modified "2023-10-16" @default.
- W4297808822 title "Effects of On-State Resistance Temperature Effect on The Static Current Balancing Capability of SiC MOSFET Power Module" @default.
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- W4297808822 doi "https://doi.org/10.1109/icept56209.2022.9872596" @default.
- W4297808822 hasPublicationYear "2022" @default.
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