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- W4297884292 abstract "Abstract The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature as well as the lack of modulation methods seriously limit the application of EB in spintronic devices. Here, we utilized a pressure engineering to efficiently tune the van der Waals (vdW) spacing of the 2D FePSe 3 /Fe3GeTe 2 heterostructures. The EB field ( H EB , from 29.2 mT to 111.2 mT) and blocking temperature ( T b , from 20 K to 110 K) are significantly enhanced, and a highly sensitive and robust spin valve is demonstrated. Interestingly, this enhancement of the EB effect was observed in exposed Fe 3 GeTe 2 , due to the single domain nature of Fe 3 GeTe 2 . Our findings provide new opportunities for the production, exploration, and tuning of magnetic vdW heterostructures with strong interlayer coupling, thereby enabling customized 2D spintronic devices in the future." @default.
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- W4297884292 date "2022-09-20" @default.
- W4297884292 modified "2023-10-12" @default.
- W4297884292 title "Manipulating Exchange Bias in 2D Magnetic Heterojunction for High-performance Robust Memory Applications" @default.
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- W4297884292 doi "https://doi.org/10.21203/rs.3.rs-2011846/v1" @default.
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