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• W4297890203 abstract "Abstract Silicon semiconductor technology is approaching its downscaling limit in state-of-the-art electronics. Atomically thin two-dimensional (2D) semiconductors allow exceptional gate electrostatics in field-effect transistors (FETs), thus holding potential as the candidate channel materials beyond silicon. However, it remains challenging to integrate ultrathin and uniform high -κ dielectrics on 2D materials to fabricate FETs with large gate capacitances, though this is highly required to reduce the device operating voltage toward the energy-efficient electronics. Here we report a versatile two-step approach to integrating high-quality dielectric film with sub-1-nm equivalent oxide thickness (EOT) on 2D materials. Inorganic molecular crystal Sb 2 O 3 is homogeneously deposited on 2D materials as a van der Waals buffer layer, which forms a high-quality oxide-to-semiconductor interface and offers a highly hydrophilic surface, enabling the integration of diverse high- κ dielectrics via atomic layer deposition. Using such an approach, we can fabricate monolayer molybdenum disulfide-based FETs with the ever-reported thinnest EOT (0.67 nm). The transistors exhibit an on/off ratio of over 10 6 using an ultralow operating voltage of 0.4 V, i.e., an unprecedentedly high gating efficiency not matched by any previous FETs. Our results may pave the way for the applications of 2D materials in the future low-power ultra-scaling electronic devices." @default.
• W4297890203 created "2022-10-01" @default.
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• W4297890203 date "2022-09-13" @default.
• W4297890203 modified "2023-10-17" @default.
• W4297890203 title "Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors with a van der Waals interface" @default.
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• W4297890203 doi "https://doi.org/10.21203/rs.3.rs-1967308/v1" @default.
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