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• W4298111362 endingPage "2207418" @default.
• W4298111362 startingPage "2207418" @default.
• W4298111362 abstract "Direct data processing in nonvolatile memories can enable area- and energy-efficient computation, unlike independent performance between separate processing and memory units; repetitive data transfer between these units represents a fundamental performance limitation in modern computers. Spatially mobile conducting domain walls in ferroelectrics can be redirected between drain, gate, and source electrodes to function as nonvolatile transistors with superior energy efficiency, ultrafast operating and communication speeds, and high logic/storage densities. Here, in-memory computing is demonstrated using multilevel domain wall diodes at LiNbO3 interfaces. Ultrathin domains within interfacial layers between each mesa-like memory cell and the contact electrodes can rectify diode-like domain wall currents with on/off current ratios exceeding 107 at low operating voltages, surpassing the performance of traditional p-n junctions using built-in potentials across depletion layers. NOT, NAND, and NOR gate logic functions are demonstrated, providing insights into high-density integration of multilevel storage and computational units in all-ferroelectric domain wall devices." @default.
• W4298111362 created "2022-10-01" @default.
• W4298111362 creator A5018365310 @default.
• W4298111362 creator A5030455794 @default.
• W4298111362 creator A5042634109 @default.
• W4298111362 creator A5044735940 @default.
• W4298111362 creator A5047906565 @default.
• W4298111362 creator A5050879224 @default.
• W4298111362 creator A5055838753 @default.
• W4298111362 creator A5058528418 @default.
• W4298111362 creator A5071025662 @default.
• W4298111362 creator A5073666373 @default.
• W4298111362 creator A5074101684 @default.
• W4298111362 creator A5090372098 @default.
• W4298111362 date "2022-09-30" @default.
• W4298111362 modified "2023-10-15" @default.
• W4298111362 title "In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO ₃ Interfaces" @default.
• W4298111362 cites W1970148650 @default.
• W4298111362 cites W1987357943 @default.
• W4298111362 cites W1997210291 @default.
• W4298111362 cites W2022193985 @default.
• W4298111362 cites W2036941130 @default.
• W4298111362 cites W2052712958 @default.
• W4298111362 cites W2062645121 @default.
• W4298111362 cites W2067228404 @default.
• W4298111362 cites W2069331674 @default.
• W4298111362 cites W2087020481 @default.
• W4298111362 cites W2124851915 @default.
• W4298111362 cites W2158930214 @default.
• W4298111362 cites W2159005400 @default.
• W4298111362 cites W2161484530 @default.
• W4298111362 cites W2258700269 @default.
• W4298111362 cites W2262647089 @default.
• W4298111362 cites W2404019925 @default.
• W4298111362 cites W2476604512 @default.
• W4298111362 cites W2520054316 @default.
• W4298111362 cites W2592944843 @default.
• W4298111362 cites W2598212190 @default.
• W4298111362 cites W2610016363 @default.
• W4298111362 cites W2627851930 @default.
• W4298111362 cites W2787400686 @default.
• W4298111362 cites W2792718680 @default.
• W4298111362 cites W2892135951 @default.
• W4298111362 cites W2963562806 @default.
• W4298111362 cites W2977837572 @default.
• W4298111362 cites W3002981577 @default.
• W4298111362 cites W3023348705 @default.
• W4298111362 cites W3033184133 @default.
• W4298111362 cites W3034554960 @default.
• W4298111362 cites W3036667467 @default.
• W4298111362 cites W3037897558 @default.
• W4298111362 cites W3096703634 @default.
• W4298111362 cites W3103607501 @default.
• W4298111362 cites W3120893773 @default.
• W4298111362 cites W3157102431 @default.
• W4298111362 cites W3165325535 @default.
• W4298111362 cites W3202238427 @default.
• W4298111362 cites W3202612387 @default.
• W4298111362 cites W4200096330 @default.
• W4298111362 doi "https://doi.org/10.1002/adfm.202207418" @default.
• W4298111362 hasPublicationYear "2022" @default.
• W4298111362 type Work @default.
• W4298111362 citedByCount "7" @default.
• W4298111362 countsByYear W42981113622023 @default.
• W4298111362 crossrefType "journal-article" @default.
• W4298111362 hasAuthorship W4298111362A5018365310 @default.
• W4298111362 hasAuthorship W4298111362A5030455794 @default.
• W4298111362 hasAuthorship W4298111362A5042634109 @default.
• W4298111362 hasAuthorship W4298111362A5044735940 @default.
• W4298111362 hasAuthorship W4298111362A5047906565 @default.
• W4298111362 hasAuthorship W4298111362A5050879224 @default.
• W4298111362 hasAuthorship W4298111362A5055838753 @default.
• W4298111362 hasAuthorship W4298111362A5058528418 @default.
• W4298111362 hasAuthorship W4298111362A5071025662 @default.
• W4298111362 hasAuthorship W4298111362A5073666373 @default.
• W4298111362 hasAuthorship W4298111362A5074101684 @default.
• W4298111362 hasAuthorship W4298111362A5090372098 @default.
• W4298111362 hasBestOaLocation W42981113621 @default.
• W4298111362 hasConcept C11413529 @default.
• W4298111362 hasConcept C119599485 @default.
• W4298111362 hasConcept C124296912 @default.
• W4298111362 hasConcept C127413603 @default.
• W4298111362 hasConcept C131017901 @default.
• W4298111362 hasConcept C134306372 @default.
• W4298111362 hasConcept C165801399 @default.
• W4298111362 hasConcept C172385210 @default.
• W4298111362 hasConcept C177950962 @default.
• W4298111362 hasConcept C192562407 @default.
• W4298111362 hasConcept C33923547 @default.
• W4298111362 hasConcept C36503486 @default.
• W4298111362 hasConcept C41008148 @default.
• W4298111362 hasConcept C49040817 @default.
• W4298111362 hasConcept C78434282 @default.
• W4298111362 hasConceptScore W4298111362C11413529 @default.
• W4298111362 hasConceptScore W4298111362C119599485 @default.
• W4298111362 hasConceptScore W4298111362C124296912 @default.
• W4298111362 hasConceptScore W4298111362C127413603 @default.
• W4298111362 hasConceptScore W4298111362C131017901 @default.

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