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- W4299299869 abstract "Abstract IDDQ testing is normally the key to isolating state-dependent defects in dense ICs. In the case study presented here, however, the functionally failing ICs did not fail the static IDDQ test nor did they draw significant current when biased into a static state on the lab bench. After extensive testing and analysis, including ATE IDDQ scanning, ATE-interfaced photo-emission microscopy, FIB assisted mechanical microprobing, and scanning capacitance microscopy, the defect was found to be p-type counterdoping of the n-active regions caused by a contaminated solvent tank used during wafer fabrication." @default.
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- W4299299869 date "2000-11-01" @default.
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- W4299299869 title "0.7 Micron Technology: A Wafer Level Failure Analysis Case Study" @default.
- W4299299869 doi "https://doi.org/10.31399/asm.edfa.2000-4.p025" @default.
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