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- W4300236598 abstract "Quantum effects play a dominant role in nanometric structures for which we need to use new methods to describe this phenomenon in device characterizations. In this paper an optimized mathematical model for the Tri gate (TG) N FinFET 14 nm transistor is presented. It is based on the “Bohm Quantum Potential (BQP) theory. The result is a curve fitting of an experimental (IDS,VDS) characteristics. The proposed model uses the Berkeley “PTM (Predictive technology model)parameters for the simulation." @default.
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- W4300236598 date "2022-05-01" @default.
- W4300236598 modified "2023-10-18" @default.
- W4300236598 title "Optimized mathematical model of experimental characteristics of 14 nm TG N FinFET" @default.
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- W4300236598 doi "https://doi.org/10.1016/j.micrna.2022.207210" @default.
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