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- W4301185510 abstract "Neuromorphic computing, which mimics brain function, can address the shortcomings of the von Neumann system and is one of the critical components of next-generation computing. The use of light to stimulate artificial synapses has the advantages of low power consumption, low latency, and high stability. We demonstrate amorphous InAlZnO-based light-stimulated artificial synaptic devices with a thin-film transistor structure. The devices exhibit fundamental synaptic properties, including excitatory postsynaptic current, paired-pulse facilitation (PPF), and short-term plasticity to long-term plasticity conversion under light stimulation. The PPF index stimulated by 375 nm light is 155.9% when the time interval is 0.1 s. The energy consumption of each synaptic event is 2.3 pJ, much lower than that of ordinary MOS devices and other optical-controlled synaptic devices. The relaxation time constant reaches 277 s after only 10 light spikes, which shows the great synaptic plasticity of the device. In addition, we simulated the learning-forgetting-relearning-forgetting behavior and learning efficiency of human beings under different moods by changing the gate voltage. This work is expected to promote the development of high-performance optoelectronic synaptic devices for neuromorphic computing." @default.
- W4301185510 created "2022-10-04" @default.
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- W4301185510 date "2022-10-04" @default.
- W4301185510 modified "2023-10-05" @default.
- W4301185510 title "Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations" @default.
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- W4301185510 doi "https://doi.org/10.1021/acsami.2c14029" @default.
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