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- W4301187855 abstract "A reduction in supply voltage in the next generation of digital systems limits extreme thermal management crises induced by a surge in power dissipation. Low-power applications benefit from transistors with reduced subthreshold slope (SS). Modern MOSFETs, which have been progressively scaling down in system dimensions in recent years, are suitable substitutes for Tunnel Field-Effect Transistors (TFETs). Short-channel effects (SCE) are negligible, I OFF is low, and SS is low in TFETs. The fact that TFETs have such a low ON-current is their biggest flaw (I ON ). The most straightforward solution to this problem is to employ a gate all-around structure rather than a single gate (SG), which will boost ION. Because of its good gate coupling, a gate all-around (GAA) structure is the greatest solution to enhance the current ratio of I OFF and I ON /I OFF . This study describes the 2D cylindrical NW-GAA-TFET with a 20nm channel length. In order to understand the proposed device behavior at various operating biases, many device metrics and analog properties are monitored. The linearity values are used to assess the effect of noise introduced into the system as a result of scaled-down dimensions." @default.
- W4301187855 created "2022-10-04" @default.
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- W4301187855 date "2022-10-04" @default.
- W4301187855 modified "2023-09-24" @default.
- W4301187855 title "Analog and Linearity Analysis of Vertical Nanowire TFET" @default.
- W4301187855 doi "https://doi.org/10.1201/9781003155751-7" @default.
- W4301187855 hasPublicationYear "2022" @default.
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