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- W4301367242 abstract "In this paper at first we review a procedure that, through the design of a basic current mirror, allows a comparison between CNTFET and MOS technology. For every simulation parameters of merit, such as relative error in reference current replication and small-signal output resistance, are evaluated in order to show the differences between the two considered technologies. Then the analysis is carried out considering also the effects of noise. For reference current of 1 μ A and 10 μ A the output static and dynamic characteristics are better in the case of CNTFET, but for all cases the output noise current is always higher for the CNTFET than for the MOS. The software used is Advanced Design System (ADS) which is compatible with the Verilog A programming language." @default.
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- W4301367242 date "2022-10-01" @default.
- W4301367242 modified "2023-10-16" @default.
- W4301367242 title "Review—Current Mirror Analysis and Design in CNTFET and CMOS Technology Including Noise Effects" @default.
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- W4301367242 doi "https://doi.org/10.1149/2162-8777/ac9758" @default.
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