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• W4301670122 abstract "In this work, we calculate, for the first time, the impact of carrier trapping at the gate polysilicon/oxide interface on the LF noise characteristics of polygate MOSFET's. After extending the channel LF noise analysis, based on carrier number and correlated mobility fluctuations approaches, to include charge variations at the polySi/oxide interface, we derive analytical expressions accounting for the impact of fluctuations of poly/oxide interfacial charge on the channel drain current and input gate voltage noise as a function of gate bias, polysilicon doping concentration and gate oxide thickness." @default.
• W4301670122 created "2022-10-05" @default.
• W4301670122 creator A5001541588 @default.
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• W4301670122 date "2006-12-01" @default.
• W4301670122 modified "2023-09-30" @default.
• W4301670122 title "IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S" @default.
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• W4301670122 doi "https://doi.org/10.1142/s0219477506003586" @default.
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