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• W4302009555 endingPage "155151" @default.
• W4302009555 startingPage "155151" @default.
• W4302009555 abstract "The structure of GaN/AlN heterointerface is commonly used in the high electron mobility transistors. To investigate the evolution and influence of GaN/AlN heterointerface during thinning, the grinding process of GaN films is simulated by molecular dynamics. The differences in the grinding process between GaN film with different thickness and pure GaN are compared. It is found that dislocation and phase transformation are the main defects at the GaN/AlN heterointerface, which will cause the stress concentration in the workpiece. The thinning process will lead to the evolution of the heterointerface and reduce the dislocation at the interface. Compared with the thinning of pure GaN, the heterointerface will promote the transformation from hexagonal wurtzite structure to cubic zinc-blende structure. In addition, there will be more chip atoms in the thinning process, because the heterointerface can hinder heat conduction and result in the higher temperature of GaN film." @default.
• W4302009555 created "2022-10-06" @default.
• W4302009555 creator A5038934949 @default.
• W4302009555 creator A5049331080 @default.
• W4302009555 creator A5080954828 @default.
• W4302009555 creator A5089264212 @default.
• W4302009555 date "2023-01-01" @default.
• W4302009555 modified "2023-10-02" @default.
• W4302009555 title "Evolution and influence of GaN/AlN heterointerface during the thinning process of GaN film" @default.
• W4302009555 cites W1991654529 @default.
• W4302009555 cites W2012871860 @default.
• W4302009555 cites W2019465613 @default.
• W4302009555 cites W2026024875 @default.
• W4302009555 cites W2030686530 @default.
• W4302009555 cites W2033579489 @default.
• W4302009555 cites W2039154278 @default.
• W4302009555 cites W2047968138 @default.
• W4302009555 cites W2079510098 @default.
• W4302009555 cites W2085822586 @default.
• W4302009555 cites W2096680264 @default.
• W4302009555 cites W2109857922 @default.
• W4302009555 cites W2122230362 @default.
• W4302009555 cites W2325958988 @default.
• W4302009555 cites W2327438196 @default.
• W4302009555 cites W2528087776 @default.
• W4302009555 cites W2604337699 @default.
• W4302009555 cites W2625271953 @default.
• W4302009555 cites W2752474223 @default.
• W4302009555 cites W2753793122 @default.
• W4302009555 cites W2755661709 @default.
• W4302009555 cites W2763878545 @default.
• W4302009555 cites W2792576343 @default.
• W4302009555 cites W2797970462 @default.
• W4302009555 cites W2902654293 @default.
• W4302009555 cites W2912339143 @default.
• W4302009555 cites W2920871521 @default.
• W4302009555 cites W2945696935 @default.
• W4302009555 cites W2945840379 @default.
• W4302009555 cites W2958568020 @default.
• W4302009555 cites W2964006242 @default.
• W4302009555 cites W2967417882 @default.
• W4302009555 cites W2989571320 @default.
• W4302009555 cites W3001124042 @default.
• W4302009555 cites W3002734995 @default.
• W4302009555 cites W3004497435 @default.
• W4302009555 cites W3016534653 @default.
• W4302009555 cites W3037473999 @default.
• W4302009555 cites W3080469016 @default.
• W4302009555 cites W3111003996 @default.
• W4302009555 cites W3155611433 @default.
• W4302009555 cites W3209767782 @default.
• W4302009555 cites W3210780874 @default.
• W4302009555 cites W3216810323 @default.
• W4302009555 cites W4206342292 @default.
• W4302009555 doi "https://doi.org/10.1016/j.apsusc.2022.155151" @default.
• W4302009555 hasPublicationYear "2023" @default.
• W4302009555 type Work @default.
• W4302009555 citedByCount "4" @default.
• W4302009555 countsByYear W43020095552023 @default.
• W4302009555 crossrefType "journal-article" @default.
• W4302009555 hasAuthorship W4302009555A5038934949 @default.
• W4302009555 hasAuthorship W4302009555A5049331080 @default.
• W4302009555 hasAuthorship W4302009555A5080954828 @default.
• W4302009555 hasAuthorship W4302009555A5089264212 @default.
• W4302009555 hasConcept C110738630 @default.
• W4302009555 hasConcept C119599485 @default.
• W4302009555 hasConcept C121332964 @default.
• W4302009555 hasConcept C127413603 @default.
• W4302009555 hasConcept C159122135 @default.
• W4302009555 hasConcept C159985019 @default.
• W4302009555 hasConcept C165801399 @default.
• W4302009555 hasConcept C172385210 @default.
• W4302009555 hasConcept C175665537 @default.
• W4302009555 hasConcept C18903297 @default.
• W4302009555 hasConcept C191897082 @default.
• W4302009555 hasConcept C192562407 @default.
• W4302009555 hasConcept C26873012 @default.
• W4302009555 hasConcept C2779227376 @default.
• W4302009555 hasConcept C2781353100 @default.
• W4302009555 hasConcept C3045981 @default.
• W4302009555 hasConcept C49040817 @default.
• W4302009555 hasConcept C535196362 @default.
• W4302009555 hasConcept C79794668 @default.
• W4302009555 hasConcept C86803240 @default.
• W4302009555 hasConceptScore W4302009555C110738630 @default.
• W4302009555 hasConceptScore W4302009555C119599485 @default.
• W4302009555 hasConceptScore W4302009555C121332964 @default.
• W4302009555 hasConceptScore W4302009555C127413603 @default.
• W4302009555 hasConceptScore W4302009555C159122135 @default.
• W4302009555 hasConceptScore W4302009555C159985019 @default.
• W4302009555 hasConceptScore W4302009555C165801399 @default.
• W4302009555 hasConceptScore W4302009555C172385210 @default.
• W4302009555 hasConceptScore W4302009555C175665537 @default.
• W4302009555 hasConceptScore W4302009555C18903297 @default.
• W4302009555 hasConceptScore W4302009555C191897082 @default.
• W4302009555 hasConceptScore W4302009555C192562407 @default.
• W4302009555 hasConceptScore W4302009555C26873012 @default.
• W4302009555 hasConceptScore W4302009555C2779227376 @default.

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