FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4303022527> ?p ?o ?g. }

• W4303022527 endingPage "46737" @default.
• W4303022527 startingPage "46726" @default.
• W4303022527 abstract "Over the past decade, SnO has been considered a promising p-type oxide semiconductor. However, achieving high mobility in the fabrication of p-type SnO films is still highly dependent on the post-annealing procedure, which is often used to make SnO, due to its metastable nature, readily convertible to SnO2 and/or intermediate phases. This paper demonstrates a fully room-temperature fabrication of p-type SnOx thin films using ion-beam-assisted deposition. This technique offers independent control between ion density, via the ion-gun anode current and oxygen flow rate, and ion energy, via the ion-gun anode voltage, thus being able to optimize the optical band gap and the hole mobility of the SnO films to reach 2.70 eV and 7.89 cm2 V-1 s-1, respectively, without the need for annealing. Remarkably, this is the highest mobility reported for p-type SnO films whose fabrication was carried out entirely at room temperature. Using first-principles calculations, we rationalize that the high mobility is associated with the fine-tuning of the Sn-rich-related defects and lattice densification, obtained by controlling the density and energy of the oxygen ions, both of which optimize the spatial overlap of the valence bands to form a continuous conduction path for the holes. Moreover, due to the absence of the annealing process, the Raman spectra reveal no significant signatures of microcrystal formation in the films. This behavior contrasts with the case involving the air-annealing procedure, where a complex interaction occurs between the formation of SnO microcrystals and the formation of SnOx intermediate phases. This interplay results in variations in grain texture within the film, leading to a lower optimum Hall mobility of only 5.17 cm2 V-1 s-1. Finally, we demonstrate the rectification characteristics of all-fabricated-at-room-temperature SnOx-based p-n devices to confirm the viability of the p-type SnOx films." @default.
• W4303022527 created "2022-10-07" @default.
• W4303022527 creator A5008358115 @default.
• W4303022527 creator A5030681423 @default.
• W4303022527 creator A5053958450 @default.
• W4303022527 creator A5065480229 @default.
• W4303022527 creator A5074956753 @default.
• W4303022527 creator A5077810973 @default.
• W4303022527 creator A5087903135 @default.
• W4303022527 creator A5091257044 @default.
• W4303022527 date "2022-10-07" @default.
• W4303022527 modified "2023-10-17" @default.
• W4303022527 title "Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition" @default.
• W4303022527 cites W1758239068 @default.
• W4303022527 cites W1817405453 @default.
• W4303022527 cites W1898743480 @default.
• W4303022527 cites W1965658382 @default.
• W4303022527 cites W1973124596 @default.
• W4303022527 cites W1977298135 @default.
• W4303022527 cites W1977419173 @default.
• W4303022527 cites W1979146385 @default.
• W4303022527 cites W1980194179 @default.
• W4303022527 cites W1980247137 @default.
• W4303022527 cites W1984391612 @default.
• W4303022527 cites W1986250062 @default.
• W4303022527 cites W1987766131 @default.
• W4303022527 cites W1994277498 @default.
• W4303022527 cites W1999322417 @default.
• W4303022527 cites W1999589524 @default.
• W4303022527 cites W2003945084 @default.
• W4303022527 cites W2009623906 @default.
• W4303022527 cites W2011653563 @default.
• W4303022527 cites W2014494345 @default.
• W4303022527 cites W2020671172 @default.
• W4303022527 cites W2026124171 @default.
• W4303022527 cites W2027737942 @default.
• W4303022527 cites W2033648340 @default.
• W4303022527 cites W2035573577 @default.
• W4303022527 cites W2035680484 @default.
• W4303022527 cites W2036791313 @default.
• W4303022527 cites W2038580851 @default.
• W4303022527 cites W2040693262 @default.
• W4303022527 cites W2043094625 @default.
• W4303022527 cites W2044937866 @default.
• W4303022527 cites W2044950723 @default.
• W4303022527 cites W2045115530 @default.
• W4303022527 cites W2049896051 @default.
• W4303022527 cites W2050336780 @default.
• W4303022527 cites W2052889575 @default.
• W4303022527 cites W2054772942 @default.
• W4303022527 cites W2067932790 @default.
• W4303022527 cites W2068239988 @default.
• W4303022527 cites W2068578719 @default.
• W4303022527 cites W2077702277 @default.
• W4303022527 cites W2083270768 @default.
• W4303022527 cites W2094545297 @default.
• W4303022527 cites W2112009348 @default.
• W4303022527 cites W2314449257 @default.
• W4303022527 cites W2317138700 @default.
• W4303022527 cites W2415413175 @default.
• W4303022527 cites W2466665304 @default.
• W4303022527 cites W2590267556 @default.
• W4303022527 cites W2743854742 @default.
• W4303022527 cites W2794268371 @default.
• W4303022527 cites W2940963635 @default.
• W4303022527 cites W2995457315 @default.
• W4303022527 cites W3024566121 @default.
• W4303022527 cites W3030763516 @default.
• W4303022527 cites W3092333557 @default.
• W4303022527 cites W3112313068 @default.
• W4303022527 cites W3176101289 @default.
• W4303022527 cites W3217361567 @default.
• W4303022527 cites W4205530246 @default.
• W4303022527 cites W4210495168 @default.
• W4303022527 cites W4210510547 @default.
• W4303022527 cites W4213144758 @default.
• W4303022527 cites W4245290456 @default.
• W4303022527 cites W4281399133 @default.
• W4303022527 cites W4293052172 @default.
• W4303022527 cites W4383855088 @default.
• W4303022527 doi "https://doi.org/10.1021/acsami.2c12617" @default.
• W4303022527 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/36203276" @default.
• W4303022527 hasPublicationYear "2022" @default.
• W4303022527 type Work @default.
• W4303022527 citedByCount "1" @default.
• W4303022527 countsByYear W43030225272023 @default.
• W4303022527 crossrefType "journal-article" @default.
• W4303022527 hasAuthorship W4303022527A5008358115 @default.
• W4303022527 hasAuthorship W4303022527A5030681423 @default.
• W4303022527 hasAuthorship W4303022527A5053958450 @default.
• W4303022527 hasAuthorship W4303022527A5065480229 @default.
• W4303022527 hasAuthorship W4303022527A5074956753 @default.
• W4303022527 hasAuthorship W4303022527A5077810973 @default.
• W4303022527 hasAuthorship W4303022527A5087903135 @default.
• W4303022527 hasAuthorship W4303022527A5091257044 @default.
• W4303022527 hasConcept C108225325 @default.
• W4303022527 hasConcept C113196181 @default.
• W4303022527 hasConcept C121332964 @default.

• next