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- W4303684352 abstract "Altering the n-type conductivity and optical properties of ultra-wide bandgap β-Ga2O3 by impurity doping has been a topic of research interest in the semiconductor field. Simultaneously, β-Ga2O3 with a monoclinic structure has exhibited interesting anisotropy. In this study, (100) and (001) V-doped β-Ga2O3 crystals were synthesized by the edge-defined film-fed growth (EFG) method, and their structural, electrical and optical properties, and defects were systematically investigated. V-doped β-Ga2O3 crystals with a (100) plane have a better crystalline quality and flatter surface than those with a (001) plane. Compared with undoped crystals (∼1016 cm−3), the carrier concentration of the (100) and (001) V-doped β-Ga2O3 substrates only increased to 4.30 × 1017 cm−3 and 1.92 × 1017 cm−3, respectively, which was related to the VxOy clusters formed by excess V as trapping traps and the carbon DX center as an electron capture trap formed by the relaxation of C atoms in the direction opposite to that of the C–O bond. The generation of absorption peaks and flat regions in the transmittance spectra was attributed to the introduction of V doping. The etch pit morphology and Raman peak intensity on the surfaces of the (100) and (001) V-doped β-Ga2O3 substrates were different owing to the anisotropy of the monoclinic lattice structure. These results contribute to the understanding of the influence of V and anisotropy on β-Ga2O3 crystals and expand their applications in electrical and optical fields." @default.
- W4303684352 created "2022-10-09" @default.
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- W4303684352 date "2023-01-01" @default.
- W4303684352 modified "2023-09-28" @default.
- W4303684352 title "Electrical and optical properties and defects of (100)- and (001)-oriented V-doped β-Ga2O3 crystals grown by EFG" @default.
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- W4303684352 doi "https://doi.org/10.1016/j.mssp.2022.107159" @default.
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