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- W4304688639 abstract "Wurtzite AlPyN1−y and Al1−xGaxPyN1−y was grown on GaN using Metal-Organic Vapour Phase Epitaxy using tertiary-butylphosphine (tBP). To incorporate more than 5% P, the temperature needs to be higher than 1100 °C and the tBP/(tBP+NH3) ratio must exceed 0.2 at 20 kPa and 0.3 at 5 kPa reactor pressure. This limits the V/III ratio to less than 20, which can result in high unintentional Ga incorporation due to the decomposition of the initial GaN surface. Thus, pure AlPyN1−y is preferably grown with nitrogen carrier gas and fast growth rates. Since P can also incorporate on the Al sub-lattice, tensile stain through coherent growth on GaN is mandatory. Too high P/N ratios or too thick layers lead to relaxation and subsequent non-stoichiometric AlxPx+yN1−y growth. A coherent 5 nm thin layer of nominal AlP0.07N0.93 showed a two-dimensional electron gas with sheet carrier densities above 1013 cm−2 at 30 K." @default.
- W4304688639 created "2022-10-12" @default.
- W4304688639 creator A5053329223 @default.
- W4304688639 date "2022-12-01" @default.
- W4304688639 modified "2023-09-29" @default.
- W4304688639 title "Wurtzite Al<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si54.svg display=inline id=d1e510><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ga<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si53.svg display=inline id=d1e522><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>P<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si15.svg …" @default.
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- W4304688639 doi "https://doi.org/10.1016/j.jcrysgro.2022.126908" @default.
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