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- W4306682014 abstract "Inorganic semiconductor Ag2Te1-x S x has been recently found to exhibit unexpected plastic deformation with compressive strain up to 30%. However, the origin of the abnormal plasticity and how to simultaneously achieve superb ductility and high mobility are still elusive. Here, we demonstrate that crystalline/amorphous Ag2Te1-x S x (x = 0.3, 0.4, and 0.5) composites can exhibit excellent compressive strain up to 70% if the monoclinic Ag2Te phase, which commonly exists in the matrix, is eliminated. Significantly, an ultra-high tensile elongation reaching 107.3% was found in Ag2Te0.7S0.3, which is the highest one yet reported in the system and even surpasses those achieved in some metals and high-entropy alloys. Moreover, high mobility of above 1000 cm2 V-1 s-1 at room temperature and good thermoelectric performance are simultaneously maintained. A modified Ashby plot with ductility factor versus carrier mobility is thereby proposed to highlight the potential of solid materials for applications in flexible/wearable electronics." @default.
- W4306682014 created "2022-10-19" @default.
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- W4306682014 date "2022-11-01" @default.
- W4306682014 modified "2023-10-14" @default.
- W4306682014 title "Achieving metal-like malleability and ductility in Ag2Te1-S inorganic thermoelectric semiconductors with high mobility" @default.
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- W4306682014 doi "https://doi.org/10.1016/j.xinn.2022.100341" @default.
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