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• W4307566818 abstract "Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3 are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3 to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices." @default.
• W4307566818 created "2022-11-03" @default.
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• W4307566818 date "2022-10-25" @default.
• W4307566818 modified "2023-10-15" @default.
• W4307566818 title "Electrical Properties of Thin ZrSe₃ Films for Device Applications" @default.
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• W4307566818 doi "https://doi.org/10.1021/acsomega.2c04198" @default.
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• W4307566818 hasPublicationYear "2022" @default.
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