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• W4307780778 abstract "GaN-based devices have grown rapidly in recent decades, due to their important research value and application prospects. There is a desire to monolithically integrate different GaN devices into a single chip for the development of future optoelectronic systems with low power consumption. In addition to improved multifunctional performance, a miniature integrated system can result in a significant reduction in material costs, processing costs, and packaging costs. In view of such prospects, we propose monolithic, top-down approaches to build III-nitride transmitter, modulator, waveguide, beam splitter, receiver, and monitor as a single unit onto a conventional GaN-on-silicon wafer without involving regrowth or postgrowth doping. Data communication among these components is realized through light propagation, opening up horizons for GaN optoelectronic systems on a chip." @default.
• W4307780778 created "2022-11-05" @default.
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• W4307780778 date "2022-10-31" @default.
• W4307780778 modified "2023-10-08" @default.
• W4307780778 title "Monolithic GaN optoelectronic system on a Si substrate" @default.
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• W4307780778 doi "https://doi.org/10.1063/5.0125324" @default.
• W4307780778 hasPublicationYear "2022" @default.
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