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- W4308016143 abstract "Two-inch diameter α -Ga 2 O 3 films with thickness ∼4 μ m were grown on basal plane sapphire by Halide Vapor Phase Epitaxy (HVPE) and doped with Sn in the top ∼1 μ m from the surface. These films were characterized with High-Resolution X-ray Diffraction (HRXRD), Scanning Electron Microscope (SEM) imaging in the Secondary Electron (SE) and Micro-cathodoluminescence (MCL) modes, contactless sheet resistivity mapping, capacitance-voltage, current-voltage, admittance spectra, and Deep Level Transient Spectroscopy (DLTS) measurements. The edge and screw dislocations densities estimated from HRXRD data were respectively 7.4 × 10 9 cm −2 and 1.5 × 10 7 cm −2 , while the films had a smooth surface with a low density (∼10 3 cm −2 ) of circular openings with diameters between 10 and 100 μ m. The sheet resistivity of the films varied over the entire 2-inch diameter from 200 to 500 Ω square −1 . The net donor concentration was ∼10 18 cm −3 near the surface and increased to ∼4 × 10 18 cm −3 deeper inside the sample. The deep traps observed in admittance and DLTS spectra had levels at E c −0.25 eV and E c −0.35 eV, with concentration ∼10 15 cm −3 and E c −1 eV with concentration ∼10 16 cm −3 ." @default.
- W4308016143 created "2022-11-07" @default.
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- W4308016143 date "2022-11-01" @default.
- W4308016143 modified "2023-10-02" @default.
- W4308016143 title "Electrical and Structural Properties of Two-Inch Diameter (0001) α-Ga<sub>2</sub>O<sub>3</sub> Films Doped with Sn and Grown by Halide Epitaxy" @default.
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- W4308016143 doi "https://doi.org/10.1149/2162-8777/ac9edb" @default.
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