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- W4308069135 abstract "A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT calibration devices produced on AlGaN/GaN following the aforementioned procedure are characterized in terms of RF-performance by using a set of measured multi-bias <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$S$</tex> -parameters. An automatic small-signal equivalent circuit extraction strategy for these AlGaN/GaN DUTs is validated and some de-embedded figures of merit, namely <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$mathrm{f}_{mathbf{T}}approx$</tex> 20 GHz and <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$f_{boldsymbol{max}}approx$</tex> 41 GHz are drawn out for initial evaluation of the technology." @default.
- W4308069135 created "2022-11-08" @default.
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- W4308069135 date "2022-09-26" @default.
- W4308069135 modified "2023-10-14" @default.
- W4308069135 title "Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates" @default.
- W4308069135 doi "https://doi.org/10.23919/eumic54520.2022.9923525" @default.
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