FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4308120366> ?p ?o ?g. }

• W4308120366 endingPage "13249" @default.
• W4308120366 startingPage "13249" @default.
• W4308120366 abstract "Nitride film played an essential role as an excellent diffusion barrier in the semiconductor field for several decades. In addition, interest in next-generation memories induced researchers' attention to nitride film as a new storage medium. A Pt/AlN/TaN device was investigated for resistive random-access memory (RRAM) application in this work. Resistive switching properties were examined in the AlN thin film formed by atomic layer deposition (ALD). The unique switching feature conducted under the positive voltage was investigated, while the typical bipolar switching was conducted under the application of negative voltage. Good retention and DC, and pulse endurances were achieved in both conditions and compared to the memory performances. Finally, the electronic behaviors based on the unique switching feature were analyzed through X-ray photoelectron spectroscopy (XPS) and the current-voltage (I-V) linear fitting model." @default.
• W4308120366 created "2022-11-08" @default.
• W4308120366 creator A5023775442 @default.
• W4308120366 creator A5058319199 @default.
• W4308120366 creator A5065070580 @default.
• W4308120366 creator A5071879741 @default.
• W4308120366 creator A5089837049 @default.
• W4308120366 date "2022-10-31" @default.
• W4308120366 modified "2023-09-30" @default.
• W4308120366 title "Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process" @default.
• W4308120366 cites W1542656885 @default.
• W4308120366 cites W1574755855 @default.
• W4308120366 cites W1662522325 @default.
• W4308120366 cites W1900673613 @default.
• W4308120366 cites W1984385114 @default.
• W4308120366 cites W2003783104 @default.
• W4308120366 cites W2006798699 @default.
• W4308120366 cites W2014012442 @default.
• W4308120366 cites W2038288913 @default.
• W4308120366 cites W2043289735 @default.
• W4308120366 cites W2048936516 @default.
• W4308120366 cites W2061047357 @default.
• W4308120366 cites W2070994110 @default.
• W4308120366 cites W2095053155 @default.
• W4308120366 cites W2100994870 @default.
• W4308120366 cites W2136888671 @default.
• W4308120366 cites W2140488524 @default.
• W4308120366 cites W2160840734 @default.
• W4308120366 cites W2397312330 @default.
• W4308120366 cites W2768076906 @default.
• W4308120366 cites W2794656737 @default.
• W4308120366 cites W2894173111 @default.
• W4308120366 cites W3040827038 @default.
• W4308120366 cites W3118450336 @default.
• W4308120366 cites W3157963655 @default.
• W4308120366 cites W3164394337 @default.
• W4308120366 cites W4200479334 @default.
• W4308120366 cites W4292169167 @default.
• W4308120366 doi "https://doi.org/10.3390/ijms232113249" @default.
• W4308120366 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/36362036" @default.
• W4308120366 hasPublicationYear "2022" @default.
• W4308120366 type Work @default.
• W4308120366 citedByCount "4" @default.
• W4308120366 countsByYear W43081203662023 @default.
• W4308120366 crossrefType "journal-article" @default.
• W4308120366 hasAuthorship W4308120366A5023775442 @default.
• W4308120366 hasAuthorship W4308120366A5058319199 @default.
• W4308120366 hasAuthorship W4308120366A5065070580 @default.
• W4308120366 hasAuthorship W4308120366A5071879741 @default.
• W4308120366 hasAuthorship W4308120366A5089837049 @default.
• W4308120366 hasBestOaLocation W43081203661 @default.
• W4308120366 hasConcept C119599485 @default.
• W4308120366 hasConcept C121332964 @default.
• W4308120366 hasConcept C127413603 @default.
• W4308120366 hasConcept C165801399 @default.
• W4308120366 hasConcept C171250308 @default.
• W4308120366 hasConcept C175708663 @default.
• W4308120366 hasConcept C177950962 @default.
• W4308120366 hasConcept C182019814 @default.
• W4308120366 hasConcept C19067145 @default.
• W4308120366 hasConcept C192562407 @default.
• W4308120366 hasConcept C194760766 @default.
• W4308120366 hasConcept C2779227376 @default.
• W4308120366 hasConcept C46141821 @default.
• W4308120366 hasConcept C49040817 @default.
• W4308120366 hasConcept C6899612 @default.
• W4308120366 hasConcept C69544855 @default.
• W4308120366 hasConceptScore W4308120366C119599485 @default.
• W4308120366 hasConceptScore W4308120366C121332964 @default.
• W4308120366 hasConceptScore W4308120366C127413603 @default.
• W4308120366 hasConceptScore W4308120366C165801399 @default.
• W4308120366 hasConceptScore W4308120366C171250308 @default.
• W4308120366 hasConceptScore W4308120366C175708663 @default.
• W4308120366 hasConceptScore W4308120366C177950962 @default.
• W4308120366 hasConceptScore W4308120366C182019814 @default.
• W4308120366 hasConceptScore W4308120366C19067145 @default.
• W4308120366 hasConceptScore W4308120366C192562407 @default.
• W4308120366 hasConceptScore W4308120366C194760766 @default.
• W4308120366 hasConceptScore W4308120366C2779227376 @default.
• W4308120366 hasConceptScore W4308120366C46141821 @default.
• W4308120366 hasConceptScore W4308120366C49040817 @default.
• W4308120366 hasConceptScore W4308120366C6899612 @default.
• W4308120366 hasConceptScore W4308120366C69544855 @default.
• W4308120366 hasFunder F4320322120 @default.
• W4308120366 hasIssue "21" @default.
• W4308120366 hasLocation W43081203661 @default.
• W4308120366 hasLocation W43081203662 @default.
• W4308120366 hasLocation W43081203663 @default.
• W4308120366 hasLocation W43081203664 @default.
• W4308120366 hasOpenAccess W4308120366 @default.
• W4308120366 hasPrimaryLocation W43081203661 @default.
• W4308120366 hasRelatedWork W1659424379 @default.
• W4308120366 hasRelatedWork W1982408584 @default.
• W4308120366 hasRelatedWork W2112018780 @default.
• W4308120366 hasRelatedWork W2137994427 @default.
• W4308120366 hasRelatedWork W2152054726 @default.
• W4308120366 hasRelatedWork W2491616039 @default.
• W4308120366 hasRelatedWork W2615735593 @default.

• next