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• W4308206529 abstract "In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel geometry on the overall device performance. Current scaling challenges for GAA nanosheet FETs are reviewed and discussed. Finally, an analysis of future innovations required to continue scaling nanosheet FETs and future technologies is discussed." @default.
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• W4308206529 date "2022-11-03" @default.
• W4308206529 modified "2023-10-05" @default.
• W4308206529 title "A Review of the Gate-All-Around Nanosheet FET Process Opportunities" @default.
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• W4308206529 doi "https://doi.org/10.3390/electronics11213589" @default.
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