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- W4308342241 abstract "We present dC / dV analysis based on the capacitance-voltage ( C – V ) measurement of quantum-dot light-emitting diodes (QLEDs), and find that some key device operating parameters (electrical and optical turn-on voltage, peak capacitance, maximum efficiency) can be directly related to the turning points and maximum/minimum of the dC / dV (versus voltage) curve. By the dC / dV study, the behaviors such as low turn-on voltage, simultaneous electrical and optical turn-on process, and carrier accumulation during the device aging can be well explained. Moreover, we perform the C – V and dC / dV measurement of aged devices, and confirm that our dC / dV analysis is correct for them. Thus, our dC / dV analysis method can be applied universally for QLED devices. It provides an in-depth understanding of carrier dynamics in QLEDs through simple C – V measurement." @default.
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- W4308342241 date "2022-12-01" @default.
- W4308342241 modified "2023-10-06" @default.
- W4308342241 title "A dC/dV Measurement for Quantum-Dot Light-Emitting Diodes" @default.
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- W4308342241 doi "https://doi.org/10.1088/0256-307x/39/12/128401" @default.
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