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• W4308346818 abstract "• A large sized Tm, Ho:GGAG disordered crystal was successfully grown by Czochralski method. • The thermal and spectra properties and lifetime were systematically investigated. • The crystal has wide absorption and emission bandwidth with large absorption and emission cross-sections. • Diode-pumped continuous-wave laser was demonstrated in Tm, Ho: GGAG crystal. In this work, crystal growth, thermal properties, spectroscopic characterization, energy-transfer (ET) schemes and continuous wave (CW) laser operation of Tm, Ho: Gd 3 Ga 3 Al 2 O 12 (GGAG) disordered crystal were systematically studied. The thermal conductivity was calculated to be 8.53 Wm -1 K -1 at 25 °C. The optical properties including absorption and emission spectra were investigated in detail. The crystal exhibits broad absorption band at 784 nm and the full width at half maximum (FWHM) and absorption coefficient are about 36 nm and 2.20 cm −1 , respectively. The maximum stimulated emission cross-section for the 5 I 7 5 I 8 transition of Ho 3+ ions at 2.07μm is calculated to be 4.94 × 10 −19 cm 2 and the emission bandwidth is about 56 nm. Continuous wave laser performance of a <111> oriented Tm, Ho: GGAG crystal sample was demonstrated, and a maximum output power of 218 mW was achieved at 2112 nm. The results indicate that the Tm, Ho: GGAG crystal is promising for broadly tunable, ultrashort pulse lasers at ∼2 μm." @default.
• W4308346818 created "2022-11-11" @default.
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• W4308346818 date "2023-01-01" @default.
• W4308346818 modified "2023-09-22" @default.
• W4308346818 title "Growth, thermal and spectroscopic properties, and continuous-wave laser performance of Tm, Ho: GGAG crystal for ∼ 2 μm lasers" @default.
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• W4308346818 doi "https://doi.org/10.1016/j.jcrysgro.2022.126948" @default.
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