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- W4308374382 abstract "• Chemical-solution-deposition processing of NiO thin films on glass substrates. • Annealing of amorphous NiO thin films using dry or wet O 2 and N 2 atmospheres. • Photoelectron spectra characteristics depend on annealing atmosphere composition. • Wet O 2 annealing atmosphere enables improved optical and electrical properties. • High transmittance and p-type conductivity due to excess of oxygen in NiO. Thermally processed nickel oxide (NiO) thin films were synthesized from nickel hydroxide films obtained by chemical solution deposition. Potential applications derived from electronic properties were studied by thermally treated thin films under two controlled annealing atmospheres. The NiO thin films with thicknesses between 160 and 192 nm and a nanowall-like morphology were obtained. Amorphous thin films with high optical transmittance in the visible region of around 85 % and ∼3.7 eV bandgap energy were obtained. The chemical composition of the NiO films was determined by X-ray photoelectron spectroscopy (XPS), which confirmed that the films were indeed composed of NiO after thermal treatment. The electrical properties were acquired through the Hall effect technique. The NiO films exhibit a p -type conductivity; the highest carrier concentration is 5×10 15 cm −3 . Mobility up to 11 cm 2 ∙ V −1 ∙ S −1 and low resistivity of 9×10 2 Ω∙cm. These properties are suitable for applications in transparent electronic devices." @default.
- W4308374382 created "2022-11-11" @default.
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- W4308374382 date "2023-01-01" @default.
- W4308374382 modified "2023-09-27" @default.
- W4308374382 title "Role of different atmosphere gasses during annealing in chemical-solution-deposition NiO thin films processing" @default.
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- W4308374382 doi "https://doi.org/10.1016/j.jnoncrysol.2022.122012" @default.
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