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• W4308483372 abstract "Abstract The paramount issues facing commercialization of GaN-on-Si RF devices include the inevitable wafer bowing and large thermal resistance when incorporating the conventional AlN/AlGaN multilayer or superlattice buffer for stress control. The large thermal resistance due to the strong phonon scattering by the AlGaN alloy and multiple interfaces of the AlN/AlGaN multilayer or superlattice buffer must be carefully addressed, which can significantly affect the performance and reliability of GaN-on-Si RF devices. In this letter, we report a successful growth of crack-free 2 μ m-thick GaN film on 6 inch high-resistivity (>10 kΩ cm) Si with a single-layer AlN buffer. By virtue of a quasi-2D GaN nucleation on the AlN buffer layer, the as-grown GaN-on-Si wafer presents a tremendous reduction in warpage from 800 to less than 8 μ m, while preserving a high crystalline quality. The full width at half maximum of x-ray diffraction of GaN (0002) and (10 <?CDATA $bar 1$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> </mml:math> 2) planes are 457 and 509 arcsec, respectively, and the residual stress is as low as 0.2 GPa. The underlying physical mechanisms of the quasi-2D GaN nucleation layer involved in stress engineering and dislocation annihilation have been discussed in detail. This work paves the way for the fabrication of low-cost and high-performance GaN RF devices grown on HR-Si." @default.
• W4308483372 created "2022-11-12" @default.
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• W4308483372 date "2022-11-14" @default.
• W4308483372 modified "2023-09-27" @default.
• W4308483372 title "Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications" @default.
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• W4308483372 doi "https://doi.org/10.1088/1361-6463/ac9fdf" @default.
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