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- W4308484082 abstract "Defects have a significant impact on the performance of semiconductor devices. Using the first-principles combined with one-dimensional static coupling theory approach, we have calculated the variation of carrier capture coefficients with temperature for the interfacial defects P b0 and P b1 in amorphous-SiO 2 /Si(100) interface. It is found that the geometrical shapes of P b0 and P b1 defects undergo large deformations after capturing carriers to form charged defects, especially for the Si atoms containing a dangling bond. The hole capture coefficients of neutral P b0 and P b1 defects are largest than the other capture coefficients, indicating that these defects have a higher probability of forming positively charged centres. Meanwhile, the calculated results of non-radiative recombination coefficient of these defects show that both P b0 and P b1 defects are the dominant non-radiative recombination centers in the interface of a-SiO 2 /Si(100)." @default.
- W4308484082 created "2022-11-12" @default.
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- W4308484082 date "2023-07-01" @default.
- W4308484082 modified "2023-09-26" @default.
- W4308484082 title "First-principles study of non-radiative carrier capture by defects at amorphous-SiO<sub>2</sub>/Si(100) interface" @default.
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- W4308484082 doi "https://doi.org/10.1088/1674-1056/ac9fc2" @default.
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