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• W4308498144 endingPage "139568" @default.
• W4308498144 startingPage "139568" @default.
• W4308498144 abstract "We present a comparative study of optical properties of silicon nitride thin films deposited by reactive radio-frequency (R-RF) sputtering, low pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). For LPCVD process, two different proportions of mixed gases were used (LPCVD (A) and LPCVD (B) processes) and PECVD deposition were conducted in three regimes: low frequency (LF), mixed frequency and high frequency. Dielectric functions were extracted from ellipsometric measurements for the wavelength range from ultraviolet to near-infrared wavelengths, spanning from 210 nm to 1690 nm. To understand how different deposition parameters affect the optical properties of thin films, additional structures and composite analysis was done by using X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, X-ray reflectometry, atomic force microscopy, reflection electron energy loss spectroscopy, Fourier-transform infrared spectroscopy and stress measurements. The series of analysis show that the influence of deposition method on optical properties is significant especially for in the range of 200 nm–400 nm. For these UV wavelengths, LPCVD (A)-deposited films give a transparency window at the shortest wavelength up to 275 nm, while R-RF-sputtering and PECVD (LF) lead to transparency windows starting up to 320 nm wavelengths. Hence, appropriate techniques and recipes should be selected to account for various peculiarities in optical and structural properties of silicon nitride films towards their potential applications in photonic and nanostructured systems." @default.
• W4308498144 created "2022-11-12" @default.
• W4308498144 creator A5009854862 @default.
• W4308498144 creator A5022349220 @default.
• W4308498144 creator A5040939190 @default.
• W4308498144 creator A5085182822 @default.
• W4308498144 date "2022-12-01" @default.
• W4308498144 modified "2023-10-18" @default.
• W4308498144 title "Optical, structural and composition properties of silicon nitride films deposited by reactive radio-frequency sputtering, low pressure and plasma-enhanced chemical vapor deposition" @default.
• W4308498144 cites W1516553900 @default.
• W4308498144 cites W1527816616 @default.
• W4308498144 cites W1916793503 @default.
• W4308498144 cites W1968433339 @default.
• W4308498144 cites W1972601374 @default.
• W4308498144 cites W1978703620 @default.
• W4308498144 cites W1981247648 @default.
• W4308498144 cites W1983861327 @default.
• W4308498144 cites W2005583226 @default.
• W4308498144 cites W2007162687 @default.
• W4308498144 cites W2009338951 @default.
• W4308498144 cites W2009659401 @default.
• W4308498144 cites W2011191527 @default.
• W4308498144 cites W2016491170 @default.
• W4308498144 cites W2020786878 @default.
• W4308498144 cites W2026743049 @default.
• W4308498144 cites W2033670590 @default.
• W4308498144 cites W2036954719 @default.
• W4308498144 cites W2037508923 @default.
• W4308498144 cites W2040935873 @default.
• W4308498144 cites W2042374635 @default.
• W4308498144 cites W2054766631 @default.
• W4308498144 cites W2057247721 @default.
• W4308498144 cites W2061883300 @default.
• W4308498144 cites W2062342354 @default.
• W4308498144 cites W2063481075 @default.
• W4308498144 cites W2065486291 @default.
• W4308498144 cites W2066304569 @default.
• W4308498144 cites W2066465920 @default.
• W4308498144 cites W2068402254 @default.
• W4308498144 cites W2080637234 @default.
• W4308498144 cites W2084178515 @default.
• W4308498144 cites W2084382659 @default.
• W4308498144 cites W2089645474 @default.
• W4308498144 cites W2091907037 @default.
• W4308498144 cites W2092216181 @default.
• W4308498144 cites W2092764428 @default.
• W4308498144 cites W2115111048 @default.
• W4308498144 cites W2125960298 @default.
• W4308498144 cites W2144228799 @default.
• W4308498144 cites W2146186375 @default.
• W4308498144 cites W2156857373 @default.
• W4308498144 cites W2166243160 @default.
• W4308498144 cites W2172272169 @default.
• W4308498144 cites W2298846345 @default.
• W4308498144 cites W2337332607 @default.
• W4308498144 cites W2340218746 @default.
• W4308498144 cites W2515877435 @default.
• W4308498144 cites W2781290791 @default.
• W4308498144 cites W2797945640 @default.
• W4308498144 cites W2809267408 @default.
• W4308498144 cites W2887263062 @default.
• W4308498144 cites W2908809095 @default.
• W4308498144 cites W2909318109 @default.
• W4308498144 cites W2955201738 @default.
• W4308498144 cites W2987947199 @default.
• W4308498144 cites W3014631433 @default.
• W4308498144 cites W3039067991 @default.
• W4308498144 cites W3059579789 @default.
• W4308498144 cites W3092423629 @default.
• W4308498144 cites W3104692882 @default.
• W4308498144 cites W3105219329 @default.
• W4308498144 cites W3105332609 @default.
• W4308498144 cites W3128628069 @default.
• W4308498144 cites W3160321799 @default.
• W4308498144 cites W3164378021 @default.
• W4308498144 cites W3178070464 @default.
• W4308498144 cites W3205943705 @default.
• W4308498144 cites W4210318854 @default.
• W4308498144 cites W4213103634 @default.
• W4308498144 doi "https://doi.org/10.1016/j.tsf.2022.139568" @default.
• W4308498144 hasPublicationYear "2022" @default.
• W4308498144 type Work @default.
• W4308498144 citedByCount "11" @default.
• W4308498144 countsByYear W43084981442023 @default.
• W4308498144 crossrefType "journal-article" @default.
• W4308498144 hasAuthorship W4308498144A5009854862 @default.
• W4308498144 hasAuthorship W4308498144A5022349220 @default.
• W4308498144 hasAuthorship W4308498144A5040939190 @default.
• W4308498144 hasAuthorship W4308498144A5085182822 @default.
• W4308498144 hasBestOaLocation W43084981441 @default.
• W4308498144 hasConcept C113196181 @default.
• W4308498144 hasConcept C120665830 @default.
• W4308498144 hasConcept C121332964 @default.
• W4308498144 hasConcept C127413603 @default.
• W4308498144 hasConcept C160892712 @default.
• W4308498144 hasConcept C171250308 @default.
• W4308498144 hasConcept C175708663 @default.
• W4308498144 hasConcept C185592680 @default.

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