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- W4308507029 abstract "Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage (Id–Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design." @default.
- W4308507029 created "2022-11-12" @default.
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- W4308507029 date "2022-11-01" @default.
- W4308507029 modified "2023-10-10" @default.
- W4308507029 title "Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure" @default.
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- W4308507029 doi "https://doi.org/10.1063/5.0119654" @default.
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