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• W4308644093 abstract "This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations evaluate the IGBT short-circuit behaviour under various conditions and device parameters variation. The internal device current density and temperature distribution show that the parasitic thyristor latch-up and the thermally-assisted leakage current generation can be the failure mechanism of SiC nIGBT when the device temperature in the p-well/n-emitter interface region is about 1500K." @default.
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• W4308644093 date "2022-09-18" @default.
• W4308644093 modified "2023-10-18" @default.
• W4308644093 title "Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT" @default.
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• W4308644093 doi "https://doi.org/10.1109/wipdaeurope55971.2022.9936475" @default.
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