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• W4308648305 abstract "Abstract Solid-state materials with a large bandgap energy have potential for high-temperature, high-power, radiation-hardened, and ultraviolet-light applications. α -Al 2 O 3 , with a bandgap energy of ∼9 eV, is one of the most attractive such materials. However, α -Al 2 O 3 suffers from a high resistivity. Here, we show that heavily Si-doped α -Al 2 O 3 (10 <?CDATA $bar{1}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mover accent=true> <mml:mn>1</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 0) layers grown by molecular beam epitaxy have a layer resistivity of 166 Ωcm at room temperature. We found that α -Al 2 O 3 layers with Sn or Si concentrations over 1 × 10 18 cm −3 are electrically conducting and the layer resistivity of the Si-doped α -Al 2 O 3 layer is dramatically reduced by post-thermal annealing at 1400 °C in a N 2 ambient." @default.
• W4308648305 created "2022-11-13" @default.
• W4308648305 creator A5060324422 @default.
• W4308648305 date "2022-11-28" @default.
• W4308648305 modified "2023-09-25" @default.
• W4308648305 title "Sn and Si doping of α-Al₂O₃ (10-10) layers grown by plasma-assisted molecular beam epitaxy" @default.
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• W4308648305 doi "https://doi.org/10.35848/1347-4065/aca196" @default.
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