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- W4308678801 endingPage "2204771" @default.
- W4308678801 startingPage "2204771" @default.
- W4308678801 abstract "Non-von-Neumann computing using neuromorphic systems based on two-terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the write and read operations using a gate electrode to tune the conductance state through charge-transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in-depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low-power neuromorphic computing are discussed." @default.
- W4308678801 created "2022-11-14" @default.
- W4308678801 creator A5011218976 @default.
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- W4308678801 creator A5033155792 @default.
- W4308678801 creator A5058291122 @default.
- W4308678801 creator A5087108704 @default.
- W4308678801 date "2022-11-10" @default.
- W4308678801 modified "2023-10-18" @default.
- W4308678801 title "ECRAM Materials, Devices, Circuits and Architectures: A Perspective" @default.
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