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- W4308702048 abstract "Image contrast is an important measure of image quality, especially for EUV lithography where high contrast can mitigate stochastic process fluctuations1 such as Line-Edge Roughness (LER), Line Width Roughness (LWR), Local CD Uniformity (LCDU) and stochastic defects. In this paper, several aspects of image contrast for EUV lithography are discussed. We will look at some of the fundamental mechanisms which degrade image contrast, including resist blur from acid diffusion. We assume the imaging of dense line/space images with k<sub>1</sub><0.5. This assumption guarantees that the image is a simple sinusoid, and implies that the exposure latitude is proportional to the image contrast. We then consider various methods to experimentally measure image contrast. The classic measure would be to measure the exposure latitude from a Focus/Exposure Matrix (FEM) wafer. The exposure latitude is generally giving a contrast measure which is averaged over some portion of the wafer. In this paper, we propose the use of MEEF (Mask Error Enhancement Factor) targets to track contrast at specific locations on the wafer. In principle, one could measure many points across the image field (or even across the whole wafer) to map out the spatial variation of contrast, i.e. a contrast map. The paper includes experimental contrast measurements that relate to stage fading, source shape and resist blur from different processes. We will also briefly look at fading from the Pole-to-Pole image shift, and how to mitigate this with a novel exposure method called Dual Monopole." @default.
- W4308702048 created "2022-11-14" @default.
- W4308702048 creator A5012403412 @default.
- W4308702048 creator A5019891569 @default.
- W4308702048 creator A5025553836 @default.
- W4308702048 creator A5034586406 @default.
- W4308702048 creator A5061482048 @default.
- W4308702048 creator A5079382304 @default.
- W4308702048 creator A5080655833 @default.
- W4308702048 creator A5090367946 @default.
- W4308702048 date "2022-12-01" @default.
- W4308702048 modified "2023-09-30" @default.
- W4308702048 title "Image contrast metrology for EUV lithography" @default.
- W4308702048 cites W2014038471 @default.
- W4308702048 cites W2036079082 @default.
- W4308702048 cites W2057922124 @default.
- W4308702048 cites W2085985801 @default.
- W4308702048 doi "https://doi.org/10.1117/12.2640647" @default.
- W4308702048 hasPublicationYear "2022" @default.
- W4308702048 type Work @default.
- W4308702048 citedByCount "0" @default.
- W4308702048 crossrefType "proceedings-article" @default.
- W4308702048 hasAuthorship W4308702048A5012403412 @default.
- W4308702048 hasAuthorship W4308702048A5019891569 @default.
- W4308702048 hasAuthorship W4308702048A5025553836 @default.
- W4308702048 hasAuthorship W4308702048A5034586406 @default.
- W4308702048 hasAuthorship W4308702048A5061482048 @default.
- W4308702048 hasAuthorship W4308702048A5079382304 @default.
- W4308702048 hasAuthorship W4308702048A5080655833 @default.
- W4308702048 hasAuthorship W4308702048A5090367946 @default.
- W4308702048 hasConcept C115961682 @default.
- W4308702048 hasConcept C120665830 @default.
- W4308702048 hasConcept C121332964 @default.
- W4308702048 hasConcept C160671074 @default.
- W4308702048 hasConcept C162996421 @default.
- W4308702048 hasConcept C171250308 @default.
- W4308702048 hasConcept C192562407 @default.
- W4308702048 hasConcept C204223013 @default.
- W4308702048 hasConcept C2776502983 @default.
- W4308702048 hasConcept C2779227376 @default.
- W4308702048 hasConcept C2780009758 @default.
- W4308702048 hasConcept C31972630 @default.
- W4308702048 hasConcept C41008148 @default.
- W4308702048 hasConcept C49040817 @default.
- W4308702048 hasConcept C53524968 @default.
- W4308702048 hasConcept C55020928 @default.
- W4308702048 hasConcept C77088390 @default.
- W4308702048 hasConceptScore W4308702048C115961682 @default.
- W4308702048 hasConceptScore W4308702048C120665830 @default.
- W4308702048 hasConceptScore W4308702048C121332964 @default.
- W4308702048 hasConceptScore W4308702048C160671074 @default.
- W4308702048 hasConceptScore W4308702048C162996421 @default.
- W4308702048 hasConceptScore W4308702048C171250308 @default.
- W4308702048 hasConceptScore W4308702048C192562407 @default.
- W4308702048 hasConceptScore W4308702048C204223013 @default.
- W4308702048 hasConceptScore W4308702048C2776502983 @default.
- W4308702048 hasConceptScore W4308702048C2779227376 @default.
- W4308702048 hasConceptScore W4308702048C2780009758 @default.
- W4308702048 hasConceptScore W4308702048C31972630 @default.
- W4308702048 hasConceptScore W4308702048C41008148 @default.
- W4308702048 hasConceptScore W4308702048C49040817 @default.
- W4308702048 hasConceptScore W4308702048C53524968 @default.
- W4308702048 hasConceptScore W4308702048C55020928 @default.
- W4308702048 hasConceptScore W4308702048C77088390 @default.
- W4308702048 hasLocation W43087020481 @default.
- W4308702048 hasOpenAccess W4308702048 @default.
- W4308702048 hasPrimaryLocation W43087020481 @default.
- W4308702048 hasRelatedWork W1008141977 @default.
- W4308702048 hasRelatedWork W1964541328 @default.
- W4308702048 hasRelatedWork W2026189755 @default.
- W4308702048 hasRelatedWork W2058198860 @default.
- W4308702048 hasRelatedWork W2061442019 @default.
- W4308702048 hasRelatedWork W2119359690 @default.
- W4308702048 hasRelatedWork W2319850956 @default.
- W4308702048 hasRelatedWork W2898026524 @default.
- W4308702048 hasRelatedWork W3053914760 @default.
- W4308702048 hasRelatedWork W3202784386 @default.
- W4308702048 isParatext "false" @default.
- W4308702048 isRetracted "false" @default.
- W4308702048 workType "article" @default.